IRLR3410TRPBF vs IRLR2705TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRPBF disebabkan oleh Infineon dan IRLR2705TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3410TRPBF | IRLR2705TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR MOSFET (HEXFET, 5th generation) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +175C |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Aras MSL | 1 (unlimited floor life at <30C/85% RH) | 1 (unlimited floor life at <30C / 85% RH) |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Jenis Transistor | — | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Power Dissipation (PD) at TC=25C | — | 68 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Configuration | — | Single N-Channel |