IRLR3410TRPBF vs IRLR2705TRLPBF Comparison
Detailed side-by-side comparison of IRLR3410TRPBF by Infineon and IRLR2705TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRPBF | IRLR2705TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.32 |
| FET Type | N-Channel | β |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR MOSFET (HEXFET, 5th generation) |
| Drain-Source Voltage (Vdss) | 100 V | β |
| Continuous Drain Current (Id) at Tc=25C | 17 A | β |
| Power Dissipation (Pd) at Tc=25C | 79 W | β |
| On-Resistance RDS(on) max | 105 mOhm | β |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | β |
| Total Gate Charge (Qg) | 22.7 nC | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | 1 (unlimited floor life at <30C / 85% RH) |
| Drain Tab Connection | Tab electrically tied to Drain | β |
| Polarity | N-Channel enhancement mode | β |
| Transistor Type | β | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | β | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Power Dissipation (PD) at TC=25C | β | 68 W |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | β | Lead-Free, RoHS Compliant |
| Configuration | β | Single N-Channel |