IRLR7843TRPBF vs IRLR3636TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR7843TRPBF disebabkan oleh Infineon dan IRLR3636TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR7843TRPBF | IRLR3636TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | — |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 34 nC | — |
| Gate-to-Source Voltage Max | ±20 V | — |
| Avalanche Energy (Eas) | Fully characterized | — |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET | IR HEXFET / IR MOSFET |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D) at T_C = 25C | — | 50 A |
| Continuous Drain Current (I_D) at T_C = 100C | — | [DATA_NEEDED: I_D at 100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum R_DS(on) at V_GS = 10V | — | 6.8 mOhm |
| Typical R_DS(on) at V_GS = 10V | — | 5.4 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) range] |
| Total Gate Charge (Q_G) | — | 33 nC |
| Maximum Power Dissition (P_D) at T_C = 25C | — | 143 W |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |