IRLS3036TRLPBF vs IRF4905LPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLS3036TRLPBF disebabkan oleh Infineon dan IRF4905LPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLS3036TRLPBF IRF4905LPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel P-Channel
Technology IR HEXFET (planar DMOS) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 270 A —
Continuous Drain Current (Id) at Tc=100C 195 A —
Pulsed Drain Current (Idm) 1100 A [DATA_NEEDED: pulsed drain current]
Rds(on) max @ Vgs=10V 1.9 mOhm —
Gate-Source Threshold Voltage (Vgs(th)) Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] —
Total Gate Charge (Qg) typ 91 nC —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max +/- V] ±20 V
Power Dissipation (Pd) at Tc=25C 380 W —
Gambaran Suhu Operasi -55C to +175C —
Kemasan D2PAK (TO-263), surface mount TO-262 (I2PAK), through-hole, 3-pin
Jenis Pemasangan Surface Mount Through Hole
Aras MSL 1 —
Status RoHS Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Integrated Body Diode Yes (avalanche rated) —
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
Suhu Hubungan Operasi — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)
Avalanche Rated — Yes

Laporan Datasheet & Sumber

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