IRLS3036TRLPBF vs IRF4905LPBF 比較

詳細並排比較 IRLS3036TRLPBF 由 Infineon 與 IRF4905LPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLS3036TRLPBF IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF ✓ 啟用中

規格比較

參數 IRLS3036TRLPBF IRF4905LPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel P-Channel
Technology IR HEXFET (planar DMOS) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 270 A —
Continuous Drain Current (Id) at Tc=100C 195 A —
Pulsed Drain Current (Idm) 1100 A [DATA_NEEDED: pulsed drain current]
Rds(on) max @ Vgs=10V 1.9 mOhm —
Gate-Source Threshold Voltage (Vgs(th)) Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] —
Total Gate Charge (Qg) typ 91 nC —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max +/- V] ±20 V
Power Dissipation (Pd) at Tc=25C 380 W —
工作溫度範圍 -55C to +175C —
封裝 D2PAK (TO-263), surface mount TO-262 (I2PAK), through-hole, 3-pin
安裝類型 Surface Mount Through Hole
MSL 等級 1 —
RoHS 狀態 Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Integrated Body Diode Yes (avalanche rated) —
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
工作接面溫度 — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)
Avalanche Rated — Yes

資料表與資源

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