ISC011N04NM7VATMA1 vs BSC340N08NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N04NM7VATMA1 disebabkan oleh Infineon dan BSC340N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC011N04NM7VATMA1 BSC340N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon OptiMOS 3 (N-Channel Trench)
Kemasan PG-TDSON-8 (source-down) PG-TDSON-8-5 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55C to +150C
RoHS Compliance Compliant (per Infineon product page) —
Aras MSL MSL 1 (per JEDEC J-STD-020) 1
Part Number — BSC340N08NS3GATMA1
Continuous Drain Current (ID, Tc) — 23 A
Continuous Drain Current (ID, Ta) — 7 A
Pulsed Drain Current (IDM) — 92 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage VGS max — +/- 20 V
Power Dissipation (Tc) — 32 W
Power Dissipation (Ta) — 2.5 W
RoHS / Lead-Free — RoHS compliant, lead-free
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

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