ISC011N06LM5ATMA1 vs IAUC60N06S5L073ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N06LM5ATMA1 disebabkan oleh Infineon dan IAUC60N06S5L073ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC011N06LM5ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | Trench (OptiMOS 5) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | 52 W |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Kemasan | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +175C |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Bilangan Pin | — | 8 |
| Configuration | — | Single N-Channel |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |