ISC015N06NM5ATMA1 vs BSC005N03LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5ATMA1 disebabkan oleh Infineon dan BSC005N03LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC005N03LS5IATMA1 BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC015N06NM5ATMA1 BSC005N03LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A —
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Kemasan PG-TDSON-8 (PQFN 5x6) Drain-Down PG-TDSON-8 FL (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C —
Technology Trench MOSFET (OptiMOS 5) OptiMOS 5 (N-channel trench MOSFET)
Status RoHS Compliant Compliant (per LCSC listing)
MSL (Moisture Sensitivity Level) 1 —
Part Number — BSC005N03LS5IATMA1
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at Ta — 42 A
Continuous Drain Current (ID) at Tc — 433 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max — 0.55 mΩ at VGS = 10 V, ID = 50 A
Gate-Source Threshold Voltage VGS(th) — 2 V (typ) at VGS = 10 mA
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 188 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Polarity — N-Channel
Aras MSL — [DATA_NEEDED: MSL rating]

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