ISC045N03L5SATMA1 vs IPB014N06NATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC045N03L5SATMA1 disebabkan oleh Infineon dan IPB014N06NATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC045N03L5SATMA1 IPB014N06NATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number ISC045N03L5SATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 / Trench OptiMOS 5 (trench-gate)
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Kemasan SuperSO8 5x6 (PG-TDSON-8-6) PG-TO263-7 (D2PAK-7)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C —
Status RoHS Compliant —
Transistor Polarity — N-Channel
Continuous Drain Current (ID) at Ta — 34 A
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 214 W
On-Resistance RDS(on) max — 1.4 mΩ at VGS=10V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Suhu Hubungan Operasi — -55 °C to +175 °C
Avalanche Rating — 100% avalanche tested
Qualification — JEDEC qualified for target applications
Primary Application — Synchronous rectification, motor control

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