ISC045N03L5SATMA1 vs IPB014N06NATMA1 比較
詳細並排比較 ISC045N03L5SATMA1 由 Infineon 與 IPB014N06NATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC045N03L5SATMA1 | IPB014N06NATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC045N03L5SATMA1 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| 封裝 | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TO263-7 (D2PAK-7) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C | — |
| RoHS 狀態 | Compliant | — |
| Transistor Polarity | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 34 A |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 214 W |
| On-Resistance RDS(on) max | — | 1.4 mΩ at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Avalanche Rating | — | 100% avalanche tested |
| Qualification | — | JEDEC qualified for target applications |
| Primary Application | — | Synchronous rectification, motor control |