ISC058N04NM5ATMA1 vs ISC015N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC058N04NM5ATMA1 disebabkan oleh Infineon dan ISC015N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC058N04NM5ATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (trench MOSFET)
Gambaran Suhu Operasi -55C to +175C -55 C to +175 C (junction, per OptiMOS 5)
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 3.4 V (typ)
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Kemasan / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Kiraan Pin — 8
Status RoHS — Compliant
Aras MSL — 1 (per Infineon SuperSO8 family)
Drive Level — Normal Level (VGS(th) ~3.4 V)

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