ISC088N08NM6ATMA1 vs ISC151N08NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC088N08NM6ATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC088N08NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | — |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Ta=25 C | 3 W | — |
| Power Dissipation (PD) at Tc=25 C | 71 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TDSON-8 FL | PG-TDSON-8 FL |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Kumpal Tetap (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Bilangan Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Operasi | — | -55 °C to +175 °C |