ISC088N08NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC088N08NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC088N08NM6ATMA1
ISC088N08NM6ATMA1 - 80V 8.8mOhm N-Channel MOSFET | Infineon
ISC088N08NM6ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC088N08NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | β |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Ta=25 C | 3 W | β |
| Power Dissipation (PD) at Tc=25 C | 71 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |