ISC151N08NM6ATMA1 vs IAUT165N08S5N029ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC151N08NM6ATMA1 disebabkan oleh Infineon dan IAUT165N08S5N029ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC151N08NM6ATMA1 IAUT165N08S5N029ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (TA=25°C) 9.2 A —
Arus Kumpal Tetap (TC=25°C) 37 A —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 48 W —
On-Resistance RDS(on) max 15.1 mΩ —
Gate Threshold Voltage VGS(th) typ 3.5 V —
Technology OptiMOS 6 —
Kemasan PG-TDSON-8 FL —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 8 —
Channel Mode Enhancement —
Suhu Operasi -55 °C to +175 °C —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Part Number — IAUT165N08S5N029ATMA2
Product Family — OptiMOS™ 5
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, Tc) — 165 A
Pulsed Drain Current (I<sub>DM</sub>) — 660 A
On-Resistance (R<sub>DS(on)</sub>) — 2.9 mΩ (typical)
Power Dissipation (P<sub>D</sub>, Tc) — 167 W
Avalanche Energy (E<sub>AS</sub>) — 225 mJ
Gambaran Suhu Operasi — -55 °C to +175 °C (T<sub>j</sub>)
Kemasan / Case — PG-HSOF-8-1 (8+Tab, Surface Mount)
MSL Rating — MSL1 (up to 260 °C peak reflow)
Automotive Qualification — AEC-Q101 Qualified
RoHS Compliance — Green Product (RoHS compliant)
Avalanche Tested — 100% Avalanche Tested

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