ISK057N04LM6ATSA1 vs IPT017N12NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISK057N04LM6ATSA1 disebabkan oleh Infineon dan IPT017N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISK057N04LM6ATSA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 120 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 15 A | — |
| Continuous Drain Current (ID) at Tc=25C | 64 A | — |
| Power Dissipation (PD) at Ta | 2.1 W | — |
| Power Dissipation (PD) at Tc | 39.1 W | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | — |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | — |
| Input Capacitance (Ciss) | 870 pF | — |
| Output Capacitance (Coss) | 290 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-VSON-6-1 (PQFN 2x2 mm) | PG-HSOF-8 (TOLL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 6 Trench | OptiMOS 6 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Suhu Operasi | — | -55C to +175C |
| Kiraan Pin | — | 8 + tab |
| Packaging | — | Tape & Reel |