K4A4G165WD-BCTD vs K4A4G165WE-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WD-BCTD disebabkan oleh Samsung Electronics dan K4A4G165WE-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WD-BCTD | K4A4G165WE-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | — |
| Kadar Data | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Core Supply (VPP) | 2.5 V | — |
| Antaramuka | SSTL-12 | Parallel, x16 |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Kemasan | 96-ball FBGA | FBGA-96 (TFBGA) |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Suhu Operasi | 0C to +85C (commercial) | 0C to +85C |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | — |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Saiz Ingatan | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |