K4A4G165WE-BCTD vs K4A4G165WD-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WE-BCTD disebabkan oleh Samsung Electronics dan K4A4G165WD-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WE-BCTD | K4A4G165WD-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Memory Organization | 256M x 16 | — |
| Antaramuka | Parallel, x16 | DDR4 (synchronous, source-synchronous strobe) |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) | — |
| Die Generation | E-die | D-die |
| Kemasan | FBGA-96 (TFBGA) | FBGA-96 |
| Terminal Count | 96 | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant (lead-free suffix) |
| Product Status | Active | — |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 | — |
| Burst Length | BL8 (JEDEC DDR4) | 8 (BL8, fixed/chop) |
| Bank Group Architecture | Yes (DDR4) | — |
| Density | — | 4 Gbit |
| Organisasi | — | 256M x 16 |
| Kadar Data | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |