K4A8G085WB-BICR vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BICR disebabkan oleh Samsung Electronics dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BICR | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 2400 Mbps | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V (VDD/VDDQ) | 1.2 V |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| Kemasan | 78-ball FBGA | 78-FBGA |
| Kiraan Pin | 78 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | — |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Suhu Operasi | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Latensi CAS | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Boson Bebas | — | Yes |