K4A8G085WC-BCPB vs K4A8G085WC-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCPB disebabkan oleh Samsung Electronics dan K4A8G085WC-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ Akhir HayatSamsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | K4A8G085WC-BCPB | K4A8G085WC-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Masa Terakhir Dibeli |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2133 Mbps | 2666 Mbps (PC4-2133) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0 C to +85 C | 0C to +95C |
| Kemasan | 78FBGA | 78-ball FBGA (78FBGA) |
| Number of Terminals | 78 | — |
| Maximum Seated Height | 1.2 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | DDR4-2133 | — |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Die Revision | [DATA_NEEDED: die revision] | — |
| Standard Package Quantity | [DATA_NEEDED: standard package quantity] | — |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Jenis Antaramuka | — | Synchronous, parallel |