K4A8G085WC-BIWE vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BIWE disebabkan oleh Samsung Electronics dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BIWE | K4A8G085WB-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 3200 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 78-FBGA | 78-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | [DATA_NEEDED: CL value] |
| Refresh | Auto-refresh, self-refresh | Auto-refresh, self-refresh |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Boson Bebas | — | Yes |