K4A8G085WC-BIWE vs K4A8G085WC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BIWE disebabkan oleh Samsung Electronics dan K4A8G085WC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WC-BIWE | K4A8G085WC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 78-FBGA | 78-ball FBGA (78FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Speed | — | 2666 Mbps/pin (DDR4-2666) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Supply Voltage Range | — | 1.14 V to 1.26 V |
| Clock Frequency | — | 1333 MHz (1333.333 GHz nominal, per web data) |
| Operating Temperature (K4A8G085WC-BITD) | — | -40 C to +95 C |
| Operating Temperature (K4A8G085WC-BCTD) | — | 0 C to +95 C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask (DM) | — | Yes |