K4A8G085WC-BIWE vs K4A8G085WC 比較
詳細並排比較 K4A8G085WC-BIWE 由 Samsung Electronics 與 K4A8G085WC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ 啟用中規格比較
| 參數 | K4A8G085WC-BIWE | K4A8G085WC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 3200 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| 工作溫度範圍 | -40°C to +95°C | — |
| 封裝 | 78-FBGA | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS 延遲 | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Speed | — | 2666 Mbps/pin (DDR4-2666) |
| 供應電壓 | — | 1.2 V |
| Supply Voltage Range | — | 1.14 V to 1.26 V |
| Clock Frequency | — | 1333 MHz (1333.333 GHz nominal, per web data) |
| Operating Temperature (K4A8G085WC-BITD) | — | -40 C to +95 C |
| Operating Temperature (K4A8G085WC-BCTD) | — | 0 C to +95 C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask (DM) | — | Yes |