K4A8G165WB-BCRC vs K4A4G165WD-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan K4A4G165WD-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | K4A4G165WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antaramuka | Parallel (DDR4 SDRAM bus) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | — |
| Technology | CMOS, B-die 8Gb die | — |
| Kemasan | 96-ball FBGA (PBGA96) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | Yes |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 4 Gbit |
| Organisasi | — | 256M x 16 |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| Jenis Antaramuka | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| CRC Function | — | Yes |
| Status RoHS | — | Lead free / RoHS Compliant |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |