K4AAG085WM-BCRC vs K4AAG085WM-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCRC disebabkan oleh Samsung Electronics dan K4AAG085WM-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WM-BCRC | K4AAG085WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | [DATA_NEEDED: exact density in Gb] | 16 Gb |
| Organisasi | x8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) | — |
| Antaramuka | SSTL12 | DDR4 (JEDEC-standard) |
| Kemasan | 78-ball FBGA | 78FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Architecture | Bank-group DDR4 | — |
| Termination | On-Die Termination (ODT) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensi CAS | [DATA_NEEDED: CL of -BCRC speed grade] | — |
| Clock | Differential clock CK/CK# | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Kadar Data | — | 3200 Mbps (DDR4-3200) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |