K4B4G1646D-BHMA vs K4B4G1646D-BMH9 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BHMA disebabkan oleh Samsung Electronics dan K4B4G1646D-BMH9 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BHMA | K4B4G1646D-BMH9 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1866 Mbps | 2133 Mb/s per pin |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA (9x13mm) |
| Suhu Operasi | -40°C to +95°C (TC) | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | 13 (at 1866 Mbps) | Programmable |
| Burst Length | 8 and 4 | 8 and 4 |
| Number of Terminals | 96 | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Refresh Mode | Auto and Self Refresh | — |
| Number of Banks | — | 8 |
| Supply Voltage (VDD) | — | 1.35V |
| Supply Voltage (VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Status RoHS | — | Compliant |