K4B4G1646E-BYK000 vs K4B4G1646E-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYK000 disebabkan oleh Samsung Electronics dan K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BYK000 | K4B4G1646E-BYK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Kemasan | 96-FBGA (BYK) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Jenis Pemasangan | Surface Mount | — |
| Antaramuka | Parallel | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0°C to +95°C (TC) |
| Ciri-ciri | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Access Time | 1.25 ns | — |
| Density | — | 4 Gb |
| Tegangan Pemberi Arus | — | 1.35 V (1.283 V to 1.45 V) |
| Kadar Data | — | DDR3-1600 (800 MHz) |
| Latensi CAS | — | 11 (CL-tRCD-tRP) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |