K4RHE165VB-BCWM vs K4RAH165VB-BCWM Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RHE165VB-BCWM disebabkan oleh Samsung Electronics dan K4RAH165VB-BCWM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4RHE165VB-BCWM | K4RAH165VB-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 24 Gb | — |
| Organisasi | 1G x 16 | — |
| Kadar Data | 5600 Mbps | — |
| Tegangan Pemberi Arus | 1.1 V | 1.1 V |
| Kemasan | 106 FBGA | FBGA-106 |
| Suhu Operasi | 0 C to +85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel, DDR5 | — |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Saiz Ingatan | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |