K4RHE165VB-BCWM vs K4RAH165VB-BCWM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RHE165VB-BCWM sa pamamagitan ng Samsung Electronics at K4RAH165VB-BCWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RAH165VB-BCWM ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RHE165VB-BCWM | K4RAH165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 24 Gb | — |
| Organisasyon | 1G x 16 | — |
| Rate ng Data | 5600 Mbps | — |
| Volte ng Pagbibigay | 1.1 V | 1.1 V |
| Packhaging | 106 FBGA | FBGA-106 |
| Temperature na Operasyon | 0 C to +85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel, DDR5 | — |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | — |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |