K6F2016U4D-FF70T00 vs K6F3216U6M-EF70T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6F2016U4D-FF70T00 disebabkan oleh Samsung Electronics dan K6F3216U6M-EF70T disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K6F2016U4D-FF70T00 | K6F3216U6M-EF70T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Asynchronous SRAM | SRAM - Asynchronous |
| Saiz Ingatan | 2 Mbit | 32 Mbit |
| Organisasi | 128K x 16 | 2M x 16 |
| Access Time (tAA) | 70 ns | — |
| Supply Voltage (Vcc) | 2.7 V to 3.3 V | — |
| Antaramuka | Parallel | Parallel |
| Technology | Full CMOS | Full CMOS Static RAM |
| Write Cycle Time (tWP) | 50 ns | — |
| Suhu Operasi | Industrial temperature range | [DATA_NEEDED: Operating Temperature Range] |
| Kemasan | 48-FBGA (6x7 mm) chip-scale package | 55-TFBGA (7.5 x 12 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grades in Family | 55 ns, 70 ns | — |
| Power Feature | Super low power and low voltage | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| Tegangan Pemberi Arus | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |
| Refresh Requirement | — | None (static memory) |