K6X0808C1D-BF70T vs K6X0808C1D-GF55000 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70T disebabkan oleh Samsung Electronics dan K6X0808C1D-GF55000 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF70T | K6X0808C1D-GF55000 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Suhu Operasi | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range] |
| Kemasan | 28-SOP | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| Lebar Bus Data | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Organisasi | — | 32K x 8 |
| Antaramuka | — | Parallel |
| Tegangan Pemberi Arus | — | 5 V |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| Jenis Output | — | Three-state, common data I/O |
| Memory Format | — | Volatile, no refresh required |
| Technology | — | Low-power CMOS |