M29F800FT55M3E2 vs M29F800FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FT55M3E2 disebabkan oleh Micron Technology dan M29F800FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron
M29F800FT55M3E2 ✓ AktifMicron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F800FT55M3E2 | M29F800FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | — |
| Saiz Ingatan | 8 Mbit | — |
| Organisasi | 512K x 16 bit | 1M x 8 / 512K x 16 |
| Antaramuka | Parallel | — |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | 5 V |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Boot Block Location | Top boot block | — |
| Program/Erase Cycles | 100,000 per block | — |
| Program Algorithm | Embedded byte/word program | — |
| Erase Features | Erase suspend and resume | — |
| Standby Mode | Automatic standby, low power | — |
| Identification | Electronic signature | — |
| Kemasan | 44-SO (SOP) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (E suffix) | Compliant (lead-free terminations) |
| Density | 8389 kbits | — |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Jenis Antaramuka | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |