M29W064FT70N3F vs M29W400FB55N3F Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W064FT70N3F disebabkan oleh Micron Technology dan M29W400FB55N3F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W064FT70N3F M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F ✓ Aktif
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W064FT70N3F M29W400FB55N3F
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash NOR Flash
Density 64 Mbit —
Organisasi 8 Mbit x8 / 4 Mbit x16 512K x8 / 256K x16
Access Time 70 ns 55 ns
Supply Voltage (VCC) up to 3.6 V for program, erase, read 2.7 V to 3.6 V
VPP Fast Program Voltage 12 V (optional) —
Antaramuka Parallel Parallel (asynchronous)
Boot Block Configuration Top boot block (FT) —
Suhu Operasi -40C to +125C [DATA_NEEDED: operating temperature range]
Kemasan 48-TSOP I 48-pin TSOP I (12 x 20 mm)
Jenis Pemasangan Surface Mount Surface Mount
Programming Method Command set / data polling / toggle bit —
Block Protection Yes, with temporary unprotection —
Product Longevity Program No —
Width x8/x16 —
Status RoHS unknown —
Saiz Ingatan — 4 Mbit
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Block Architecture — Boot block with hardware sector protection
Program Suspend/Erase Suspend — Supported
Packaging — Tape & Reel (TR)
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

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