M29W320DB70N3F vs M29W640GB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W320DB70N3F disebabkan oleh Micron Technology dan M29W640GB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W320DB70N3F | M29W640GB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Technology | Parallel NOR Flash | — |
| Density | 32 Mbit (33554 kbits) | 64 Mbit (8 MByte) |
| Organisasi | 2 M x 16 | 4M x16 / 8M x8 |
| Bus Width | x8/x16 selectable | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | — |
| VPP Fast Program Voltage | 12 V | — |
| Block Organization | Non-uniform parameter blocks, boot block (DB = bottom boot block) | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP I, 12 x 20 mm | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel | Parallel, asynchronous |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging Variant (TR) | Tape & Reel available (M29W320DB70N3F TR) | — |
| Tegangan Pemberi Arus | — | 2.7 V to 3.6 V |
| Boot Block | — | Bottom boot block (GB) |
| Programming | — | Word/Byte program, block erase |
| Command Set | — | M29W family standard command set |
| Chipset Validation | — | N/A |
| FBGA Code | — | N/A |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |