M29W320DB70N3F vs M29W640GB70N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W320DB70N3F sa pamamagitan ng Micron Technology at M29W640GB70N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W320DB70N3F - 32Mbit NOR Flash 70ns TSOP-48 | Micron
M29W320DB70N3F ✓ NakahandaMicron Technology
M29W640GB70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron
M29W640GB70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W320DB70N3F | M29W640GB70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Flash | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | NOR Flash |
| Technology | Parallel NOR Flash | — |
| Density | 32 Mbit (33554 kbits) | 64 Mbit (8 MByte) |
| Organisasyon | 2 M x 16 | 4M x16 / 8M x8 |
| Bus Width | x8/x16 selectable | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | — |
| VPP Fast Program Voltage | 12 V | — |
| Block Organization | Non-uniform parameter blocks, boot block (DB = bottom boot block) | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 48-TSOP I, 12 x 20 mm | 48-TSOP I |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel | Parallel, asynchronous |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging Variant (TR) | Tape & Reel available (M29W320DB70N3F TR) | — |
| Volte ng Pagbibigay | — | 2.7 V to 3.6 V |
| Boot Block | — | Bottom boot block (GB) |
| Programming | — | Word/Byte program, block erase |
| Command Set | — | M29W family standard command set |
| Chipset Validation | — | N/A |
| FBGA Code | — | N/A |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |