MD7IC2755GNR1 vs MD7IC2050NR1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MD7IC2755GNR1 disebabkan oleh NXP Semiconductors dan MD7IC2050NR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MD7IC2755GNR1 MD7IC2755GNR1 - 2.5-2.7GHz 10W WiMAX RF LDMOS PA | NXP

MD7IC2755GNR1 - 2.5-2.7GHz 10W WiMAX RF LDMOS PA | NXP

MD7IC2755GNR1 ✓ Aktif
NXP Semiconductors
MD7IC2050NR1 MD7IC2050NR1 - 10W W-CDMA RF LDMOS Amplifier | NXP 2.1GHz

MD7IC2050NR1 - 10W W-CDMA RF LDMOS Amplifier | NXP 2.1GHz

MD7IC2050NR1 ✓ Aktif

Pengandingan Spesifikasi

Parametr MD7IC2755GNR1 MD7IC2050NR1
Merek NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MD7IC2755GNR1 MD7IC2050NR1
Description RF LDMOS Wideband Integrated Power Amplifier —
Frequency Range 2500 MHz to 2700 MHz —
RF Type WiMAX / Cellular base-station —
Supply Voltage (Vdd) 28 V (range 26 V to 32 V) 28 V
Supply Current (Idq) 275 mA —
Gain 25 dB —
Average Output Power 10 W (CW, P1dB typical 30 W) —
Drain Voltage Rating 65 V transient —
Kemasan / Case TO-270-14 Variant, Gull Wing TO-270-14 Variant, Flat Leads (TO-270 WB-14)
Jenis Pemasangan Surface Mount Surface Mount
Operating Mode Doherty (production-tested symmetrical) —
VSWR Ruggedness 10:1 stable —
Spurious (all spurs) Below -60 dBc from 100 mW to 10 W CW —
MSL [DATA_NEEDED: MSL level] —
Packaging Tape & Reel Tape & Reel
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: current RoHS status]
Device Type — RF LDMOS Integrated Power Amplifier
RF Type / Modulation — W-CDMA / 3GPP
Frequency Range (datasheet typical) — 1.88 GHz to 2.1 GHz
Frequency Range (broadband match) — 1.75 GHz to 2.05 GHz
Output Power (Average, W-CDMA) — 10 W
Supply Voltage Range — 26 V to 32 V
Quiescent Supply Current — 230 mA
Power Gain (Gp) — 30.5 dB at 2.14 GHz
Architecture — Two-stage, on-chip matched
Maximum Input Power (CW) — 28 dBm

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