MRF6S21100NBR1 vs MRF6S21100NR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S21100NBR1 disebabkan oleh NXP Semiconductors dan MRF6S21100NR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF6S21100NBR1 | MRF6S21100NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Jenis Transistor | N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Drain Supply Voltage (Typical) | 28 V | — |
| Pout (Average, W-CDMA) | 23 W | — |
| Power Gain (Typical) | 14.5 dB | — |
| Operating Current (at Pout) | 1.05 A | — |
| Quiescent Current (IDQ, Typical) | 1600 mA | — |
| Drain Voltage Rated | 68 V | — |
| Kemasan / Case | TO-272 WB-4 (plastic over-molded) | TO-270 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-272BB | — |
| Jenis Pemasangan | Surface Mount / Flange Mount with PCB thermal pad | Surface Mount (plastic overmold) |
| Technology | LDMOS, enhancement-mode | RF Power LDMOS (7th-generation) |
| Application | W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage | — |
| Part Status | Obsolete | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: confirm RoHS compliance status] |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Frequency Band | — | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | — | 28 V |
| Drain Current (Continuous) | — | 1.05 A |
| Drain Current (Pulsed) | — | [DATA_NEEDED: pulsed drain current value] |
| Power Gain | — | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | — | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | — | 1600 mA |
| Operating Mode | — | Class AB |
| Modulation Support | — | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | — | 68 V (rated) |