MRF6S9160HSR3 vs MRFE6S9160HR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF6S9160HSR3 disebabkan oleh NXP Semiconductors dan MRFE6S9160HR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | MRF6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Masa Terakhir Dibeli | Aktif |
| Jenis Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Kemasan | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Jenis Pemasangan | Flange / Chassis Mount with screw holes | Chassis / Flange mount (through-hole RF leads) |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors |
| Technology | — | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Kemasan / Case | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Gambaran Suhu Operasi | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Aras MSL | — | Not applicable (non-SMD air-cavity package) |