MRF6S9160HSR3 vs MRFE6S9160HR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S9160HSR3 tarafından NXP Semiconductors ve MRFE6S9160HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Son Satın AlmaÖzellik Karşılaştırması
| Parametre | MRF6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Son Alış Zamanı | Aktif |
| Transistor Türü | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Paket | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Montaj Türü | Flange / Chassis Mount with screw holes | Chassis / Flange mount (through-hole RF leads) |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors |
| Technology | — | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Paket / Kas | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| İşletim Sıcaklığı Aralığı | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| RoHS Durumu | — | Compliant |
| Lead-Free | — | Yes |
| MSL Seviyesi | — | Not applicable (non-SMD air-cavity package) |