MT40A1G8SA-075:E vs K4A8G085WC-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A1G8SA-075:E disebabkan oleh Micron Technology dan K4A8G085WC-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | MT40A1G8SA-075:E | K4A8G085WC-BCTD |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Masa Terakhir Dibeli |
| Jenis Ingatan | SDRAM - DDR4 | DDR4 SDRAM |
| Saiz Ingatan | 8Gbit (1G x 8) | — |
| Antaramuka | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2 V (1.14 V to 1.26 V) |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Gambaran Suhu Operasi | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Kemasan | 78-FBGA (7.5x11 mm) | 78-ball FBGA (78FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | Yes |
| Data Mask Function | Supported | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| Ball Pitch | — | 0.8 mm |
| Suhu Operasi | — | 0C to +95C |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Jenis Antaramuka | — | Synchronous, parallel |