MT40A256M16GE-075E:B vs MT40A256M16GE-083E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A256M16GE-075E:B disebabkan oleh Micron Technology dan MT40A256M16GE-083E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
MT40A256M16GE-075E:B MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B ✓ Aktif
Micron Technology
MT40A256M16GE-083E MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E ✗ Akhir Hayat

Pengandingan Spesifikasi

Parametr MT40A256M16GE-075E:B MT40A256M16GE-083E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Akhir Hidup
Harga Unit (USD) $3.95 —
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Saiz Ingatan 4 Gbit —
Organisasi 256M x 16 256M x 16
Memory Interface Parallel —
Clock Frequency 1.33 GHz 1200 MHz (DDR4-2400)
Kadar Data 2666 MT/s (DDR4-2666) —
VDD / VDDQ 1.2 V +/-60 mV —
VPP 2.5 V, -125 mV/+250 mV —
Internal Banks 16 —
Refresh 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C [DATA_NEEDED: refresh rate]
I/O Type 1.2 V pseudo open-drain —
VREFDQ On-die, internal, adjustable generation —
Special Features Temperature controlled refresh (TCR) —
Kemasan 96-FBGA (9 x 14 mm) 96-ball FBGA, 9 x 14 mm
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range for standard grade] [DATA_NEEDED: operating temperature range]
Access Time [DATA_NEEDED: CAS latency / access time] —
Density — 4 Gbit
Tegangan Pemberi Arus — 1.2 V
Antaramuka — Parallel
Technology — CMOS DRAM
ECCN — EAR99
Country of Origin — China
Boson Bebas — Compliant
Lead Free — Yes
Introduction Date — August 2017
Lifecycle — Obsolete / End of Life (per distributor cross-reference data)
Latensi CAS — [DATA_NEEDED: CAS latency at DDR4-2400]

Laporan Datasheet & Sumber

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