MT40A2G8AG-062E vs H5ANAG8NBJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A2G8AG-062E disebabkan oleh Micron Technology dan H5ANAG8NBJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A2G8AG-062E | H5ANAG8NBJR-PBC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit (2 GB) |
| Organisasi | 2G x 8 | x8 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensi CAS | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Kemasan | 78-FBGA (7.5 x 11 mm) | FBGA-78 (7.5 mm x 11 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Die Revision | AG (current generation) | BJR |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| Jenis Antaramuka | — | Parallel, SSTL12 |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |