MT40A512M16JY-07EAIT:B vs NT6AN8T0SA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16JY-07EAIT:B disebabkan oleh Micron Technology dan NT6AN8T0SA disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ Aktif
Pengandingan Spesifikasi
| Parametr | MT40A512M16JY-07EAIT:B | NT6AN8T0SA |
|---|---|---|
| Merek | Micron Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | LPDDR2 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 64M x 32 |
| Clock Frequency | 1.33 GHz | — |
| Kadar Data | 2666 MT/s | 1066 Mbps (533 MHz) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Antaramuka | Parallel | — |
| Kemasan | 96-FBGA (8x14) | FBGA |
| Gambaran Suhu Operasi | -40°C to +105°C (AIT grade) | -30°C to +85°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Density | — | 2Gb |
| Tegangan Pemberi Arus | — | 1.2V |
| I/O Voltage | — | 1.2V |
| Jenis Pemasangan | — | Surface Mount |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Refresh Period | — | 64ms at 85°C |
| Burst Length | — | 4 or 8 |
| On-Die Termination | — | Yes |
| DLL | — | Yes |