MT40A512M16TB-062E:J vs MT40A512M16TB-062E:R Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16TB-062E:J disebabkan oleh Micron Technology dan MT40A512M16TB-062E:R disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ AktifMicron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16TB-062E:J | MT40A512M16TB-062E:R |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $60.00 |
| Jenis Ingatan | SDRAM - DDR4 | DDR4 SDRAM |
| Saiz Ingatan | 8Gbit (512M x 16) | 8 Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz | 1600 MHz |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Kemasan | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13 mm) |
| Gambaran Suhu Operasi | 0°C to 95°C | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Jenis Pemasangan | Surface Mount | — |
| Kadar Data | — | 3200 MT/s |
| Latensi CAS | — | 22 |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Suhu Operasi | — | 0°C to +95°C |
| Antaramuka | — | Parallel |
| Lebar Bus Data | — | 16 bits |
| Ciri-ciri | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |