MT40A512M16TB-062E:J vs MT40A512M16TB-062E:R Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16TB-062E:J sa pamamagitan ng Micron Technology at MT40A512M16TB-062E:R sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ NakahandaMicron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M16TB-062E:J | MT40A512M16TB-062E:R |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $60.00 |
| Uri ng Memory | SDRAM - DDR4 | DDR4 SDRAM |
| Laki ng Memory | 8Gbit (512M x 16) | 8 Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz | 1600 MHz |
| Access Time | 19 ns | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) | — |
| Prefetch Architecture | 8n-bit | — |
| Packhaging | 96-FBGA (7.5x13.5 mm) | 96-FBGA (7.5x13 mm) |
| Hanay ng Temperature na Operasyon | 0°C to 95°C | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Rate ng Data | — | 3200 MT/s |
| Latensya ng CAS | — | 22 |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Temperature na Operasyon | — | 0°C to +95°C |
| Interface | — | Parallel |
| Width ng Data Bus | — | 16 bits |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |