MT40A512M16TD-062E AUT:R vs K4A4G165WG-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16TD-062E AUT:R disebabkan oleh Micron Technology dan K4A4G165WG-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
MT40A512M16TD-062E AUT:R ✓ AktifSamsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16TD-062E AUT:R | K4A4G165WG-BCWE |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $16.90 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Saiz Ingatan | 8 Gbit | 4 Gbit |
| Organisasi | 512M x 16 | — |
| Antaramuka | Parallel | Parallel |
| Clock Frequency / Data Rate | 1.6 GHz | — |
| Access Time | 19 ns | 19 ns |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kemasan | 96-FBGA (7.5 x 13 mm) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT grade) | — |
| Packaging Suffix | -R (Tape & Reel) | — |
| Speed Grade | -062E | — |
| Technology Family | DDR4 SDRAM (SDR/DDR family) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval spec] | [DATA_NEEDED: refresh interval] |
| Memory Organization | — | 256M x 16 |
| Kadar Data | — | 3200 Mbps |
| Suhu Operasi | — | 0C to +85C |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |
| Status RoHS | — | Compliant (per JLCPCB listing) |
| Clock Frequency | — | [DATA_NEEDED: clock frequency / tCK range] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |