MT40A512M8RH-083E vs H5AN4G8NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M8RH-083E disebabkan oleh Micron Technology dan H5AN4G8NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A512M8RH-083E | H5AN4G8NBJR-RDC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | Auto-refresh and self-refresh |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal, adjustable generation | — |
| Suhu Operasi | 0C to +95C | — |
| Kemasan | 78-ball FBGA (9 x 10.5 mm) | 78-ball FBGA |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| Status RoHS | Compliant | Lead-Free & Halogen-Free (RoHS Compliant) |
| Latensi CAS | [DATA_NEEDED: CAS latency per speed bin table] | — |
| Antaramuka | — | DDR4 (Double Data Rate IV) |
| Jenis Pemasangan | — | Surface Mount |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: VDD supply voltage] |
| Kadar Data | — | [DATA_NEEDED: speed grade Mbps] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |