MT41K256M16TW-107 vs H5TC4G63CFR-XXJ Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16TW-107 disebabkan oleh Micron Technology dan H5TC4G63CFR-xxJ disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT41K256M16TW-107 | H5TC4G63CFR-xxJ |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14.10 | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Antaramuka | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | — |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35 V | — |
| Lebar Bus Data | 16 bit | — |
| Kemasan | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | 0C to +95C (commercial :P grade) | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Density | — | 4 Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Clock Input | — | Fully differential (CK, CK#) |
| Data Strobe | — | Differential (DQS, DQS#) |
| On-Chip DLL | — | Yes |
| DM Mask | — | Yes |
| Gambaran Suhu Operasi | — | 0°C to 95°C (case) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Speed Grade | — | [DATA_NEEDED: speed grade for -xxJ suffix] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency options] |
| Burst Length | — | 8 and 4 (with burst chop) |
| On-Die Termination | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |