MW7IC2220NR1 vs MW7IC2220NBR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MW7IC2220NR1 disebabkan oleh NXP Semiconductors dan MW7IC2220NBR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
NXP Semiconductors
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
MW7IC2220NR1 ✓ AktifNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ AktifPengandingan Spesifikasi
| Parametr | MW7IC2220NR1 | MW7IC2220NBR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | LDMOS (Laterally Diffused MOSFET) | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | W-CDMA / Wideband Integrated Power Amplifier | — |
| Frequency Range | 2000 MHz to 2200 MHz | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Band (W-CDMA) | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2167.5 MHz | — |
| Output Power (Avg, W-CDMA) | 2 W Avg. | — |
| Supply Voltage (VDD) | 28 V typical | — |
| Drain Voltage Rating | 24 V to 32 V operational range | — |
| Quiescent Current (IDQ1) | 80 mA | — |
| Quiescent Current (IDQ2) | 300 mA | — |
| Small-Signal Gain | 31 dB | 31 dB (typical at 2.17 GHz) |
| Input/Output Matching | On-chip, 50 ohm nominal | — |
| Stages | Two-stage integrated amplifier | — |
| Kemasan / Case | TO-270-16 Variant, Flat Leads (TO-270WB-16) | — |
| Jenis Pemasangan | Surface Mount (with bolted flange/heatsink tab) | Surface Mount (flange/over-molded) |
| Suhu Operasi | -40C to +150C (junction) | — |
| Packaging | Tape & Reel (R1 suffix) | — |
| Modulation Formats Supported | W-CDMA, TD-SCDMA, single-carrier W-CDMA | — |
| Fungsi | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |