MW7IC2220NR1 vs MW7IC2220NBR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MW7IC2220NR1 tarafından NXP Semiconductors ve MW7IC2220NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
MW7IC2220NR1 ✓ AktifNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MW7IC2220NR1 | MW7IC2220NBR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | LDMOS (Laterally Diffused MOSFET) | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | W-CDMA / Wideband Integrated Power Amplifier | — |
| Frequency Range | 2000 MHz to 2200 MHz | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Band (W-CDMA) | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2167.5 MHz | — |
| Output Power (Avg, W-CDMA) | 2 W Avg. | — |
| Supply Voltage (VDD) | 28 V typical | — |
| Drain Voltage Rating | 24 V to 32 V operational range | — |
| Quiescent Current (IDQ1) | 80 mA | — |
| Quiescent Current (IDQ2) | 300 mA | — |
| Small-Signal Gain | 31 dB | 31 dB (typical at 2.17 GHz) |
| Input/Output Matching | On-chip, 50 ohm nominal | — |
| Stages | Two-stage integrated amplifier | — |
| Paket / Kas | TO-270-16 Variant, Flat Leads (TO-270WB-16) | — |
| Montaj Türü | Surface Mount (with bolted flange/heatsink tab) | Surface Mount (flange/over-molded) |
| İşletim Sıcaklığı | -40C to +150C (junction) | — |
| Packaging | Tape & Reel (R1 suffix) | — |
| Modulation Formats Supported | W-CDMA, TD-SCDMA, single-carrier W-CDMA | — |
| Fonksiyon | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |