NT5CB256M16CP-DI vs K4B4G1646D-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CB256M16CP-DI disebabkan oleh Nanya Technology dan K4B4G1646D-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CB256M16CP-DI | K4B4G1646D-BYK0 |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Density | 4 Gb | 4 Gbit |
| Tegangan Pemberi Arus | 1.35 V (DDR3L) | 1.35 V (1.5 V compatible) |
| Kadar Data | 1600 Mbps/pin (max) | 1600 Mbps (PC3-12800) |
| Kemasan | TFBGA-96 | 96-ball FBGA |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Additive Latency | 0-13 | — |
| Gambaran Suhu Operasi | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Differential Clock Input | Yes (CK, CK#) | — |
| On-Die Termination (ODT) | Yes | — |
| Suhu Operasi | — | 0°C to 85°C |
| Latensi CAS | — | Programmable (e.g., 11, 10, 9) |
| Burst Length | — | 8 (with burst chop 4) |
| On-Die Termination | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Bilangan Pin | — | 96 |
| Die Revision | — | D-die |